 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| so t-8 9 plastic-encapsulate transistors mc k 100- 6 - 8 silicon planar pnpn thyristor features current-i gt : 200 a i trms : 0.8 a v drm : MCK100-6 400 v mck100-8 600 v operating and stor age junction temperature range t j t stg : -55 to +150 electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min max unit on state voltage * v tm i tm =1a 1.7 v gate trigger voltage v gt v ak =7v 0.8 v peak repetitive forward and reverse blocking voltage MCK100-6 mck100-8 v drm and v rrm i drm = 10 a ,v max =1010 v 400 600 v peak forward or reverse blocking current i drm i rrm v ak = rated v drm or v rrm 10 a holding current i h i hl = 20 ma , av = 7 v 5 ma a2 5 15 a a1 15 30 a a 30 80 a gate trigger current i gt b v ak =7v 80 200 a * forward current applied for 1 ms maximum duration duty cycle 1% sot-89 1.kathode 2.anode 3.gate tiger electronic co.,ltd
typical characteristics MCK100-6,-8 |
Price & Availability of MCK100-6
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |